Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3435470
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Funding
- MKE
- NRF/MEST [R11-2005-048-00000-0, 2008-0059952, 2009-0077593]
- World Gold Council [RP05-08]
- Kookmin University
- National Research Foundation of Korea [2008-0059952, 2009-0077593, 2008-0060669] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Organic nanofloating gate memory devices were developed based on ink-jet printed 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene thin-film transistors (TFTs) embedding gold nanoparticles. The programming/erasing operations showed that the organic memory devices exhibited good programmable memory characteristics that resulted in a gate-voltage controlled reliable threshold voltage shift of the programmed/erased states. The data retention and endurance measurements also showed the reliable nonvolatile memory properties. Solution processes were used for synthesis of the charge trapping elements and TIPS-pentacene TFTs were made by the ink-jet printing technique at low temperatures. Therefore, these processes can readily be adopted in all-printed organic memory devices on flexible substrates. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3435470]
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