Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3455313
Keywords
electronegativity; electronic structure; elemental semiconductors; semiconductor doping; silicon
Categories
Ask authors/readers for more resources
Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult. (C) 2010 American Institute of Physics. [doi:10.1063/1.3455313]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available