Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3421535
Keywords
cathodoluminescence; erbium; gallium compounds; III-V semiconductors; luminescence; molecular beam epitaxial growth
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Funding
- Grants-in-Aid for Scientific Research [22656004] Funding Source: KAKEN
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Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN. (C) 2010 American Institute of Physics. [doi:10.1063/1.3421535]
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