Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3432749
Keywords
alumina; atomic layer deposition; bonds (chemical); composite material interfaces; etching; III-V semiconductors; indium compounds; oxidation; passivation; spectral line breadth; X-ray photoelectron spectra
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Funding
- FCRP Materials Structures and Devices (MSD) Center
- National Science Foundation (NSF) under ECCS [0925844]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925844] Funding Source: National Science Foundation
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Undoped InAs(100) wafers were either passivated with sulfur from a (NH(4))(2)S(x) solution or etched with NH(4)OH and then characterized with monochromatic x-ray photoelectron spectroscopy (XPS) before and after in situ deposition of Al(2)O(3) by atomic layer deposition. Sulfur passivation minimized oxidation. Trimethyl aluminum (TMA) exposure reduced trivalent indium and arsenic oxidation states. The In(1+) chemical state persisted while elemental arsenic remained at the Al(2)O(3)/InAs interface prior to TMA exposure and possibly a mixture of As-As and As-Al bonds were present afterwards. The In 3d(5/2) peak line shape from bulk InAs differed from previous XPS experiments on epitaxial In(x)Ga(1-x)As. (C) American Institute of Physics. [doi: 10.1063/1.3432749]
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