Journal
APPLIED PHYSICS LETTERS
Volume 97, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3508948
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Funding
- Zernike Institute for Advanced Materials, University of Groningen, The Netherlands
- European Community [FP7/2007-2013, 248092]
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Cross-talk in memories using resistive switches in a cross-bar geometry can be prevented by integration of a rectifying diode. We present a functional cross bar memory array using a phase separated blend of a ferroelectric and a semiconducting polymer as storage medium. Each intersection acts simultaneously as a bistable rectifying diode. A logic table of a 4-bit memory and integration into a 3 x 3 cross bar array are demonstrated. The most difficult state, a high resistance bit completely surrounded by low resistance bits could be unambiguously identified. (C) 2010 American Institute of Physics. [doi:10.1063/1.3508948]
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