4.6 Article

Thermal shot noise in top-gated single carbon nanotube field effect transistors

Journal

APPLIED PHYSICS LETTERS
Volume 96, Issue 19, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3425889

Keywords

carbon nanotubes; field effect transistors; nanotube devices; shot noise; thermal noise

Funding

  1. ANR [ANR-2005-055-HF-CNT, ANR-05-NANO-010-01-NL-SBPC]
  2. EU [IST-FP6-011285]

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The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of one-dimensional nanotransistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of 13 mu e/root Hz in the 0.2-0.8 GHz band. (C) 2010 American Institute of Physics. [doi:10.1063/1.3425889]

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