Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3428959
Keywords
ferromagnetic materials; free energy; gallium arsenide; III-V semiconductors; magnetic anisotropy; magnetic semiconductors; magnetic switching; manganese compounds
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Funding
- MEXT/JSPS
- GCOE Program at Tohoku University
- MEXT
- Grants-in-Aid for Scientific Research [21681021] Funding Source: KAKEN
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Electrical anisotropy modulation was recently observed in ferromagnetic semiconductors and metals. The authors have investigated magnetization switching through magnetic anisotropy modulation induced by external electric field by means of simulation. Macrospin simulation using Landau-Lifshitz-Gilbert equation shows that switching is possible by controlling magnetic anisotropy for appropriate sets of parameters. The condition for quasistatic magnetization switching is also presented, in which magnetization direction is determined to minimize the magnetic free energy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428959]
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