Journal
APPLIED PHYSICS LETTERS
Volume 85, Issue 22, Pages 5409-5411Publisher
AMER INST PHYSICS
DOI: 10.1063/1.1828236
Keywords
-
Categories
Ask authors/readers for more resources
Organic field-effect transistors with a polymeric electret as gate insulator and fullerenes as a molecular semiconductor were fabricated. We observed an amplification of the drain-source current I-ds on the order of 10(4) upon applying a gate voltage V-g. Reversing the gate voltage V-g features large metastable hysteresis in the transfer characteristics I-ds (V-g) with a long retention time. The observation of a switchable channel current I-ds is proposed to originate from charge storage in the organic electret. As such, this device is a demonstration of an organic nonvolatile memory element switchable with the gate voltage. (C) 2004 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available