Journal
APPLIED PHYSICS LETTERS
Volume 96, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3336011
Keywords
aluminium compounds; Coulomb blockade; gallium arsenide; oscillations; semiconductor doping; semiconductor quantum dots; single electron transistors
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Funding
- Australian Research Council (ARC)
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We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation doping. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and an order of magnitude better than in silicon SETs.
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