Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3232244
Keywords
-
Categories
Funding
- Ministry and National Science Council of the Republic of China [NSC-98-2628-M-002-008]
Ask authors/readers for more resources
Double side light emission devices based on p-NiO/n-ZnO nanowire heterojunctions have been fabricated on indium tin oxide substrate by radio frequency magnetron sputtering combined with hydrothermal process. According to the energy band alignment, the detected broad visible and narrow ultraviolet electroluminescence arise from defect and band edge transitions in ZnO nanowires, respectively. The unique property of the double side emission is due to the nature of the large band gap of NiO film. It provides a good opportunity for the emission of a light emitting device with different colors on the top and back sides, simultaneously. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3232244]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available