Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3153508
Keywords
charge injection; current density; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells
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Funding
- Korea government (MEST) [R15-2008-006-02001-0, R17-2007-078-01000-0]
- BK 21 program in Korea
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The effect of an electron blocking layer (EBL) on the efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes (LEDs) is investigated. At low current density, the LEDs with a p-AlGaN EBL show a higher external quantum efficiency (EQE) than LEDs without an EBL. However, the EQE of LEDs without an EBL is higher than LEDs with an EBL as injection current density is increased. The improved EQE of LEDs without an EBL at high current density is attributed to the increased hole injection efficiency.
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