Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3133348
Keywords
elemental semiconductors; gallium compounds; germanium; III-V semiconductors; indium compounds; nanostructured materials; photoconductivity; photonic crystals; p-n junctions; solar cells
Categories
Funding
- CONSOLIDER-Ingenio 2010 Genesis-FV project [CSD2006004, TEC200502745, TEC200422300E]
- NUMANCIA [S05050/ENE/0310]
- [NAN2004-08843-C05-04]
- [NAN2004-09109-C0401]
- [TEC-2005-05781-C03-01]
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A single-junction germanium solar cell with a photonic crystal nanostructured surface has been developed. The solar cell comprises a Ge p-n junction and an InGaP window layer. The InGaP window layer has been nanopatterned with an extended photonic crystal structure consisting on a triangular lattice of holes with submicronic sizes. Enhancements of the external quantum efficiency of 22% for a wide range of wavelengths and up to a 46% for specific wavelengths have been measured, which implies an increase in photocurrent between 11% and 22%. A clear correlation with the area of photonic crystal patterned has been observed.
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