Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3148341
Keywords
buffer layers; dislocation density; elemental semiconductors; energy gap; gallium arsenide; gallium compounds; germanium; III-V semiconductors; indium compounds; semiconductor junctions; solar cells
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Funding
- European Commission [SES6-CT-2003-502620]
- Federal Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) [03285554F]
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A metamorphic Ga(0.35)In(0.65)P/Ga(0.83)In(0.17)As/Ge triple-junction solar cell is shown to provide current-matching of all three subcells and thus composes a device structure with virtually ideal band gap combination. We demonstrate that the key for the realization of this device is the improvement of material quality of the lattice-mismatched layers as well as the development of a highly relaxed Ga(1-y)In(y)As buffer structure between the Ge substrate and the middle cell. This allows the metamorphic growth with low dislocation densities below 10(6) cm(-2). The performance of the approach has been demonstrated by a conversion efficiency of 41.1% at 454 suns (454 kW/m(2), AM1.5d ASTM G173-03).
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