Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3156027
Keywords
aluminium compounds; gallium arsenide; III-V semiconductors; impurity distribution; photoconductivity; photovoltaic effects; segregation; semiconductor doping; semiconductor growth; semiconductor quantum wells; silicon
Categories
Funding
- DFG via programs [SPP 1285, SFB 689]
- RFBR
- Russian President
- Dynasty foundation-ICFPM
Ask authors/readers for more resources
Both structure and bulk inversion asymmetry in modulation-doped (001)-grown GaAs quantum wells were investigated employing the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be accurately tailored by the delta-doping layer position. Symmetrically doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-doping position, we can grow samples with almost equal degrees of structure and bulk inversion asymmetry.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available