Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3176977
Keywords
copper; electrical conductivity transitions; electrochemical electrodes; platinum; random-access storage; solid electrolytes; zirconium compounds
Categories
Funding
- Chinese NSFC [60825403, 60676008, 60676061]
- NSF [0829824]
- SRC FCRP
- [2006CB302706]
- [2006CB806204]
- [2007CB935302]
- [2008AA031403]
- [2009AA03Z306]
- Division of Computing and Communication Foundations
- Direct For Computer & Info Scie & Enginr [0829824] Funding Source: National Science Foundation
Ask authors/readers for more resources
We report the direct electrical measurement of multiple resistance steps in the ZrO2-based solid electrolyte nonvolatile memory device using the refined dc I-V method with a very small voltage increasing rate. The results demonstrate that multiple conductive filaments are formed successively between the bottom and top metal electrodes through the insulating layer while increasing the bias voltage, which are consistent with the electrical field simulation results based on the solid electrolyte theory. The inverse relationship between resistance steps and the filament formation sequence are obtained, which helps understand the switching mechanism of the multiple conductive filaments.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available