Related references
Note: Only part of the references are listed.Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
Tsu-Tsung Li et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2009)
High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
Jan Benick et al.
APPLIED PHYSICS LETTERS (2008)
Silicon surface passivation by atomic layer deposited Al2O3
B. Hoex et al.
JOURNAL OF APPLIED PHYSICS (2008)
On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
B. Hoex et al.
JOURNAL OF APPLIED PHYSICS (2008)
Stack system of PECVD amorphous silicon and PECVD silicon oxide for silicon solar cell rear side passivation
M. Hofmann et al.
PROGRESS IN PHOTOVOLTAICS (2008)
Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3
J. Schmidt et al.
PROGRESS IN PHOTOVOLTAICS (2008)
Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
B. Hoex et al.
APPLIED PHYSICS LETTERS (2007)
Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
B. Hoex et al.
APPLIED PHYSICS LETTERS (2006)
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
RL Puurunen
JOURNAL OF APPLIED PHYSICS (2005)
Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon
D Macdonald et al.
APPLIED PHYSICS LETTERS (2004)
Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
S Dauwe et al.
PROGRESS IN PHOTOVOLTAICS (2002)
Minority carrier lifetime degradation in boron-doped Czochralski silicon
SW Glunz et al.
JOURNAL OF APPLIED PHYSICS (2001)
Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition
RS Johnson et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2001)