Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3116717
Keywords
aluminium alloys; annealing; cobalt alloys; ferromagnetic materials; iron alloys; magnesium compounds; magnetic epitaxial layers; magnetic multilayers; molecular beam epitaxial growth; silicon alloys; tunnelling magnetoresistance
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Funding
- Industrial Technology Research
- New Energy and Industrial Technology Development Organization of Japan
- Shoeikagaku foundation
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The authors have developed a magnetic tunnel junction of Co2FeAl0.5Si0.5 electrodes and a MgO barrier fabricated by molecular beam epitaxy and observed that this device had a tunnel magnetoresistance ratio of 386% at approximately 300 K and 832% at 9 K. The lower Co2FeAl0.5Si0.5 electrode was annealed during and after deposition resulting in a highly ordered structure with small roughness. This highly ordered structure could be obtained by annealing treatment even at low temperatures. Furthermore, a weak temperature dependence of the tunnel magnetoresistance ratio was observed for the developed magnetic tunnel junction.
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