Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3272858
Keywords
electron density; elemental semiconductors; energy states; MIS devices; semiconductor quantum dots; semiconductor-metal boundaries; silicon
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Funding
- Emil Aaltonen Foundation
- Australian Research Council
- Australian Government
- U.S. National Security Agency
- U.S. Army Research Office [W911NF-08-1-0527]
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We report on low-temperature electronic transport measurements of a silicon metal-oxidesemiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot energy levels to be probed without affecting the electron density in the leads and vice versa. Appropriate gate biasing enables the dot occupancy to be reduced to the single-electron level, as evidenced by magnetospectroscopy measurements of the ground state of the first two charge transitions. Independent gate control of the electron reservoirs also enables discrimination between excited states of the dot and density of states modulations in the leads.
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