Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3077021
Keywords
alumina; graphene; insulated gate field effect transistors; semiconductor device models
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Funding
- NRI-SWAN
- DARPA [FA8650-08-C-7838]
- CERA program
- IBM-UT [W0853811]
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We fabricate and characterize dual-gated graphene field-effect transistors using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8000 cm(2)/V s at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.
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