GaSb-based, 2.2 μm type-I laser fabricated on GaAs substrate operating continuous wave at room temperature

We report on a Sb-based type-I laser grown on GaAs substrate, emitting continuous wave at room temperature around 2.2 mu m. The device was grown using solid-source molecular beam epitaxy and comprised two GaInAsSb quantum wells embedded in AlGaAsSb barriers. Despite the large lattice mismatch, a good crystalline quality was obtained, and processed devices operated continuous wave up to 50 degrees C with threshold current densities in the range of 1.5-2.2 kA/cm(2). An optical output power of 3.7 mW was obtained at 20 degrees C.