Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes

The Auger recombination coefficient in In0.1Ga0.9N/GaN quantum wells, emitting at 407 nm has been determined from large signal modulation measurements on lasers in which these quantum wells form the gain region. A value of 1.5x10(-30) cm(6) s(-1) is determined for the Auger coefficient at room temperature, which is used to analyze the reported efficiency characteristics of 410 nm In0.1Ga0.9N/GaN quantum wells light emitting diodes. The calculated efficiencies agree remarkably well with the measured ones. It is apparent that Auger recombination is largely responsible for limiting device efficiencies at high injection currents.