Related references
Note: Only part of the references are listed.Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells
Xianfeng Ni et al.
APPLIED PHYSICS LETTERS (2008)
On the importance of radiative and Auger losses in GaN-based quantum wells
J. Hader et al.
APPLIED PHYSICS LETTERS (2008)
On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
Jinqiao Xie et al.
APPLIED PHYSICS LETTERS (2008)
Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes
Yi Yang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Successful fabrication of white light emitting diodes by using extremely high external quantum efficiency blue chips
Yukio Narukawa et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Origin of efficiency droop in GaN-based light-emitting diodes
Min-Ho Kim et al.
APPLIED PHYSICS LETTERS (2007)
Auger recombination in InGaN measured by photoluminescence
Y. C. Shen et al.
APPLIED PHYSICS LETTERS (2007)
Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
I. V. Rozhansky et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2007)