Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3081059
Keywords
Auger effect; current density; gallium compounds; indium compounds; light emitting diodes; magnesium; photoemission; quantum well devices; semiconductor quantum wells; wide band gap semiconductors
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Funding
- NNIN network
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Test structures were developed to experimentally measure the presence of electron overflow in light-emitting diodes (LEDs) under typical bias conditions. These test structures are comprised of a standard LED structure with an extra Mg-doped quantum well inserted on the p-type side of the electron blocking layer. Electrons escaping the active region recombine in the extra quantum well and the corresponding photon emission is observed. No electron overflow was observed at low current densities. At intermediate current densities where efficiency droop occurs, overflow was observed and increased with increasing current density. The onset of electron overflow occurred at slightly lower current densities than the onset of efficiency droop. Auger-assisted overflow, a by-product of the Auger process, is considered in addition to traditional overflow mechanisms.
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