Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3154548
Keywords
atomic force microscopy; dislocations; elemental semiconductors; gallium compounds; III-V semiconductors; molecular beam epitaxial growth; nucleation; reflection high energy electron diffraction; semiconductor thin films; silicon; stacking faults; transmission electron microscopy
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Funding
- Army Research Office [DAAD 19 -01 -0588]
- Air Force Research Laboratory at Kirtland AFB [FA9453-08C-0172]
- Air Force Office of Scientific Research [FA9550-06-1-0557]
- Ohio Wright Center for Photovoltaics Innovation and Commercialization
- Intel Corporation
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GaP films were grown on offcut Si(001) substrates using migration enhanced epitaxy nucleation followed by molecular beam epitaxy, with the intent of controlling and eliminating the formation of heterovalent (III-V/IV) nucleation-related defects-antiphase domains, stacking faults, and microtwins. Analysis of these films via reflection high-energy electron diffraction, atomic force microscopy, and both cross-sectional and plan-view transmission electron microscopies indicate high-quality GaP layers on Si that portend a virtual GaP substrate technology, in which the aforementioned extended defects are simultaneously eliminated. The only prevalent remaining defects are the expected misfit dislocations due to the GaP-Si lattice mismatch.
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