Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3244203
Keywords
-
Categories
Funding
- Enterprise Ireland [CFTD 06-304]
- EPSRC [EP/G042330/1, EP/E035167/1, EP/H019324/1, TS/G001383/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [TS/G001383/1, EP/G042330/1, EP/E035167/1, EP/H019324/1] Funding Source: researchfish
Ask authors/readers for more resources
Carrier transport in InGaN light emitting diodes has been studied by comparing the electroluminescence (EL) from a set of triple quantum well structures with different indium content in each well, leading to multicolor emission. Both the sequence and width of the quantum wells have been varied. Comparison of the EL spectra reveals the current dependent carrier transport between the quantum wells, with a net carrier flow toward the deepest quantum well. (C) 2009 American Institute of Physics. [doi:10.1063/1.3244203]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
