Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3149704
Keywords
cadmium compounds; elemental semiconductors; free radicals; germanium; II-VI semiconductors; nanowires; phonons; photoconductivity; Raman spectra; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wires; wide band gap semiconductors
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Funding
- DRDO, Government of India
- Council of Scientific and Industrial Research, Government of India
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CdS/Ge nanowire heterojunction has been grown by chemical deposition of CdS on Ge nanowire templates. Transmission electron micrographs show the growth of core-shell Ge/CdS nanowire radial heterostructures. Raman spectra reveal the confinement of phonons in nanocrystalline CdS shell grown on Ge nanowires. A diodelike behavior in I-V characteristics of Ge/CdS heterojunction is observed due to the formation of rectifying junction between CdS shells and Ge nanowire cores. An improved photocurrent spectrum of Ge/CdS heterojunction nanowires with broadband response from visible to near-IR region is demonstrated.
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