4.6 Article

A simple design of flat hyperlens for lithography and imaging with half-pitch resolution down to 20 nm

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 20, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3141457

Keywords

lenses; masks; optical fabrication; photolithography

Funding

  1. U. S. Department of Energy [AC02-05CH11231]
  2. National Science Foundation (NSF) Nanoscale Science and Engineering Center [CMMI-0751621]

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We propose that a hyperlens can be used for photolithography to generate deep subwavelength arbitrary patterns from diffraction-limited masks. Numerical simulation shows that half-pitch resolution down to 20 nm is possible from a mask with 280 nm period at working wavelength 375 nm. We also extend the hyperlens projection concept from cylindrical interfaces to arbitrary interfaces. An example of a flat interface hyperlens is numerically demonstrated for lithography purposes.

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