Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3205113
Keywords
doping profiles; III-V semiconductors; indium compounds; monolayers; nanofabrication; nanostructured materials; p-n junctions; secondary ion mass spectra; semiconductor doping; sulphur; transmission electron microscopy
Categories
Funding
- NSF [0826145]
- Intel Corporation
- MARCO/MSD
- SEMATECH
- NSF COINS
- Berkeley Sensor and Actuator Center
- Intel Graduate Fellowship
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [0826145] Funding Source: National Science Foundation
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One of the challenges for the nanoscale device fabrication of III-V semiconductors is controllable postdeposition doping techniques to create ultrashallow junctions. Here, we demonstrate nanoscale, sulfur doping of InAs planar substrates with high dopant areal dose and uniformity by using a self-limiting monolayer doping approach. From transmission electron microscopy and secondary ion mass spectrometry, a dopant profile abruptness of similar to 3.5 nm/decade is observed without significant defect density. The n(+)/p(+) junctions fabricated by using this doping scheme exhibit negative differential resistance characteristics, further demonstrating the utility of this approach for device fabrication with high electrically active sulfur concentrations of similar to 8x10(18) cm(-3).
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