Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3077184
Keywords
carrier density; copper; electrical conductivity; Fermi surface; II-VI semiconductors; metallic thin films; multilayers; semiconductor thin films; semiconductor-metal boundaries; wide band gap semiconductors; zinc compounds
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Funding
- National Science Foundation [DMR-0602716]
- Army Research Laboratory (ARL) [W911NG-04-2-0005]
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ZnO/Cu/ZnO multilayer structures are obtained with the highest conductivity of dielectric-metal-dielectric films reported in literature with a carrier concentration of 1.2x10(22) cm(-3) and resistivity of 6.9x10(-5) Omega-cm at the optimum copper layer thickness. The peak transmittance, photopic averaged transmittance, and Haacke figure of merit are 88%, 75%, and 8.7x10(-3) Omega(-1), respectively. The conduction mechanism involves metal to oxide carrier injection prior to the formation of a continuous metal conduction pathway. Optical transmission is elucidated in terms of copper's absorption due to d-band to Fermi surface transitions at short wavelengths and reflectance combined with scattering losses at long wavelengths.
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