Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3094880
Keywords
aluminium compounds; erbium compounds; finite element analysis; gallium compounds; III-VI semiconductors; indium compounds; nanoparticles; Seebeck effect; semiconductor thin films; thermal conductivity; thermoelectric devices; thin film devices
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Funding
- ONR MURI Thermionic Energy Converison Center
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We utilize the transient Harman technique to measure the thermoelectric figure of merit of thin films. A device structure is designed and fabricated to extract the thermoelectric properties of 20 mu m thick film composed of InGaAlAs semiconductor with embedded ErAs nanoparticles. High-speed voltage measurements with 63 dB of dynamic range and 200 ns resolution are achieved. Surface temperature measurements of the devices are used to extract the cross-plane Seebeck coefficient and thermal conductivity of the thermoelectric material. Self-consistent finite-element simulations of the three-dimensional temperature distributions in the active devices are in close agreement with the experimental thermal maps.
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