Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3204446
Keywords
cathodoluminescence; electroluminescence; electron-hole recombination; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; MOCVD; quantum well devices; semiconductor quantum wells; wide band gap semiconductors
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Funding
- U.S. Department of Energy [DE-FC26-08NT01581]
- U.S. National Science Foundation [0701421]
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Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520-525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8-2.8 and 2.0-3.5 times, respectively, over those of conventional InGaN QW LED.
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