Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition

N-polar high electron mobility transistors (HEMTs) were fabricated from GaN/AlGaN/GaN heterostructures grown on n-type vicinal C-face SiC substrates by metalorganic chemical vapor deposition. The heterostructures had a sheet charge density and mobility of 6.6x10(12) cm(-2) and 1370 cm(2) V(-1) s(-1), respectively. HEMTs with a gate length of 0.7 mu m had a peak transconductance of 135 mS/mm, a peak drain current of 0.65 A/mm, and a three-terminal breakdown voltage greater than 150 V. At a drain bias of 20 V, the current-gain and power-gain cutoff frequencies with the pad capacitances de-embedded were 17 and 33 GHz, respectively.