Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3122347
Keywords
aluminium compounds; electric properties; gallium compounds; high electron mobility transistors; III-V semiconductors; MOCVD; silicon compounds
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Funding
- AFOSR
- ONR Millimeterwave Initiative for Nitride Electronics (MINE)
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N-polar high electron mobility transistors (HEMTs) were fabricated from GaN/AlGaN/GaN heterostructures grown on n-type vicinal C-face SiC substrates by metalorganic chemical vapor deposition. The heterostructures had a sheet charge density and mobility of 6.6x10(12) cm(-2) and 1370 cm(2) V(-1) s(-1), respectively. HEMTs with a gate length of 0.7 mu m had a peak transconductance of 135 mS/mm, a peak drain current of 0.65 A/mm, and a three-terminal breakdown voltage greater than 150 V. At a drain bias of 20 V, the current-gain and power-gain cutoff frequencies with the pad capacitances de-embedded were 17 and 33 GHz, respectively.
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