Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3124242
Keywords
CMOS integrated circuits; elemental semiconductors; resonant tunnelling devices; semiconductor quantum dots; silicon; single electron devices
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Funding
- Australian Research Council
- Australian Government
- U.S. National Security Agency
- U.S. Army Research Office [W911NF-04-1-0290]
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A few-electron double quantum dot was fabricated using metal-oxide-semiconductor-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the interdot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.
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