Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 2, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3070524
Keywords
conduction bands; density functional theory; electronic density of states; indium compounds; semiconductor materials; valence bands; X-ray absorption spectra; X-ray emission spectra; X-ray photoelectron spectra
Categories
Funding
- Department of Energy [DE-FG02-98ER45680]
- Donors of the American Chemical Society Petroleum Research Fund
- U. S. Army Research Office [DAAD19-01-10364, DAAH04-95-0014]
- U. S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-AC02-98CH10886]
- EPSRC-GB, U. K. [GR/S94148]
- European Community [NMP4-CT-2004-500198]
- Deutsche Forschungsgemeinschaft [Be1346/18-2]
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The valence and conduction band structures of In2O3 have been measured using a combination of valence band x-ray photoemission spectroscopy, O K-edge resonant x-ray emission spectroscopy, and O K-edge x-ray absorption spectroscopy. Excellent agreement is noted between the experimental spectra and O 2p partial density of states calculated within hybrid density functional theory. Our data are consistent with a direct band gap for In2O3.
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