4.6 Article

Crossover of angular dependent magnetoresistance with the metal-insulator transition in colossal magnetoresistive manganite films

Journal

APPLIED PHYSICS LETTERS
Volume 95, Issue 13, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3240407

Keywords

-

Funding

  1. National Natural Science Foundation of China
  2. National Basic Research of China
  3. Knowledge Innovation Project of the Chinese Academy of Sciences

Ask authors/readers for more resources

The temperature and magnetic field dependence of angular dependent magnetoresistance (AMR) along two orthogonal directions ([100] and [0 (1) over bar1]) was investigated in a charge-orbital-ordered Sm0.5Ca0.5MnO3 (SCMO) film grown on (011)-oriented SrTiO3 substrates. A dramatic decrease of AMR magnitude in both directions was observed with the appearance of magnetic-field-induced metal-insulator transition, which further led to a sign crossover in the AMR effect. The AMR crossover may give a direct evidence of the drastic modification of electronic structure or possible orbital reconstruction with the magnetic-destruction of charge/orbital ordering in SCMO films. (C) 2009 American Institute of Physics. [doi:10.1063/1.3240407]

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available