Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3108088
Keywords
electrical resistivity; semiconductor thin films; titanium compounds
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Funding
- National Program for 0.1Terabit NVM Devices
- National Research Foundation of Korea [과C6A2003] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This study examined the relationship between the conducting filament resistance and reset voltage during the resistance switching of TiO2 thin films assuming a filament with a conical shape. There was a critical resistance (similar to 20 Omega) of the set state above and below which the filament responded differently in response to the current. Maintaining a higher set state resistance was more beneficial in achieving a more uniform reset voltage. This filament model coincides well with the localized switching behavior and the recently microscopically observed filament shape.
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