Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3200237
Keywords
bismuth compounds; low energy electron diffraction; molecular beam epitaxial growth; narrow band gap semiconductors; Raman spectra; scanning tunnelling microscopy; semiconductor epitaxial layers; semiconductor growth; X-ray diffraction; X-ray photoelectron spectra
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Funding
- National Natural Science Foundation [10874210]
- MOST of China [2007CB936800]
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Atomically smooth, single crystalline Bi2Se3 thin films were prepared on Si(111) by molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron emission spectroscopy, and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with controllable thickness down to one quintuple layer (similar to 1 nm).
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