Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3086333
Keywords
fluorescence; gallium arsenide; III-V semiconductors; indium compounds; microcavities; Q-factor; Schrodinger equation; self-assembly; semiconductor quantum dots; silicon
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Funding
- Natural Sciences and Engineering Research Council of Canada [355628-08]
- Fonds de recherche sur la nature et les technologies [2009-NC-125840]
- Canadian Institute for Photonic Innovations
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We report on the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtube ring resonators on Si substrates achieved using a simple but controllable substrate-on-substrate transfer process. We have observed three-dimensionally confined optical modes, including both radial and axial field distributions from quantum dot microtubes on Si with an engineered geometry at 77 K, which agrees well with results calculated using a photonic quasi-Schrodinger equation. An intrinsic Q-factor of similar to 2000 is also derived.
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