Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 9, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3086461
Keywords
excitons; gallium arsenide; III-V semiconductors; indium compounds; semiconductor quantum dots
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Funding
- Engineering and Physical Sciences Research Council [EP/F009968/1, EP/C008871/1] Funding Source: researchfish
- EPSRC [EP/F009968/1] Funding Source: UKRI
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An optical write-store-read process is demonstrated in a single InGaAs quantum dot within a charge-tunable device. A single dark exciton is created by nongeminate optical excitation allowing a dark exciton-based memory bit to be stored for over similar to 1 mu s. Read-out is performed with a gigahertz bandwidth electrical pulse, forcing an electron spin-flip followed by recombination as a bright neutral exciton, or by charging with an additional electron followed by a recombination as a negative trion. These processes have been used to determine accurately the dark exciton spin-flip lifetime as it varies with static electric field.
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