Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3103885
Keywords
crystal defects; gallium arsenide; III-V semiconductors; indium compounds; photonic crystals; quantum electrodynamics; self-assembly; semiconductor quantum dots
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Funding
- NSF NIRT [0304678]
- Marie Curie [EXT-CT-2006-042580]
- NSF
- U. S. Department of Education GAANN
- Division Of Physics
- Direct For Mathematical & Physical Scien [0304678] Funding Source: National Science Foundation
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Single self-assembled InAs quantum dots embedded in GaAs photonic crystal defect cavities are a promising system for cavity quantum electrodynamics experiments and quantum information schemes. Achieving controllable coupling in these small mode volume devices is challenging due to the random nucleation locations of individual quantum dots. We have developed an all optical scheme for locating the position of single dots with sub-10 nm accuracy. Using this method, we are able to deterministically reach the strong coupling regime with a spatial positioning success rate of approximately 70%. This flexible method should be applicable to other microcavity architectures and emitter systems.
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