Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3119192
Keywords
gallium compounds; III-V semiconductors; light emitting diodes; nanofabrication; nanophotonics; vapour deposition; wide band gap semiconductors
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Funding
- DOE-BES [DE-FG02-06ER46347]
- Sandia National Laboratories
- National Science Council of Republic of China (ROC) in Taiwan
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Here we propose and realize a scheme for making a direct contact to a two-dimensional nanorod light-emitting diode (LED) array using the oblique-angle deposition approach. And, more importantly, we demonstrate highly efficient electrical carrier injection into the nanorods. As a result, we show that at a 20 mA dc current injection, the light output power density of our nanorod LED array is 3700 mW cm(-2). More general, this contact scheme will pave the ways for making direct contacts to other kinds of nanoscale optoelectronic devices.
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