4.6 Article

High output power density from GaN-based two-dimensional nanorod light-emitting diode arrays

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 14, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3119192

Keywords

gallium compounds; III-V semiconductors; light emitting diodes; nanofabrication; nanophotonics; vapour deposition; wide band gap semiconductors

Funding

  1. DOE-BES [DE-FG02-06ER46347]
  2. Sandia National Laboratories
  3. National Science Council of Republic of China (ROC) in Taiwan

Ask authors/readers for more resources

Here we propose and realize a scheme for making a direct contact to a two-dimensional nanorod light-emitting diode (LED) array using the oblique-angle deposition approach. And, more importantly, we demonstrate highly efficient electrical carrier injection into the nanorods. As a result, we show that at a 20 mA dc current injection, the light output power density of our nanorod LED array is 3700 mW cm(-2). More general, this contact scheme will pave the ways for making direct contacts to other kinds of nanoscale optoelectronic devices.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available