Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3089687
Keywords
elemental semiconductors; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; numerical analysis; semiconductor doping; semiconductor quantum wells; silicon; wide band gap semiconductors
Categories
Ask authors/readers for more resources
We report on a significant decrease in the diode-ideality factor of GaInN/GaN multiple quantum well light-emitting diodes (LEDs), from 5.5 to 2.4, as Si-doping is applied to an increasing number of quantum barriers (QBs). The minimum ideality factor of 2.4 is obtained when all QBs are doped. It is shown that polarization-induced triangular band profiles of the undoped QBs are the major cause of the high ideality factors in GaInN/GaN LEDs. Numerical simulations show excellent agreement with the measured ideality factor value and its dependence on QB doping.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available