Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3265737
Keywords
carrier mobility; dielectric thin films; electrodes; invertors; membranes; organic semiconductors; spin coating; thin film circuits; thin film transistors
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Funding
- Royal Society
- University of Cambridge and Nokia
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We have fabricated flexible pentacene thin film transistors (OTFTs) and active load inverter circuits directly onto polydimethylsiloxane (PDMS) membranes. Gold electrodes, parylene C gate dielectric, and pentacene films are deposited using a room temperature and all-vapor phase process on spin-coated or cast PDMS. The channel stack on PDMS is wrinkled but crack-free. The devices have good electrical properties with saturation mobilities up to 0.2 cm(2)/V s, and on/off current ratio of 5x10(4). The OTFT circuits on PDMS withstand modest repeated bending without electrical failure.
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