Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3126451
Keywords
density functional theory; electronic density of states; graphene; Green's function methods; impurity states; nanocontacts; nanoelectronics; negative resistance devices; nitrogen; semiconductor devices; semiconductor materials
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Funding
- National Natural Science Foundation of China [10674121, 20773112, 20533030, 50721091]
- National Key Basic Research Program [2006CB922004]
- Science and Technological Fund of Anhui Province [08040106833]
- USTC-HP HPC
- SC-CAS
- Shanghai Supercomputer Center
- Swedish Research Council
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We present a theoretical study on electronic structure and elastic transport properties of armchair graphene nanoribbon based junctions by using density functional theory calculations and nonequilibrium Green's function technique. The I-V characteristics of various junctions are examined, which all exhibit robust negative differential resistance (NDR) phenomena. It is found that such NDR behaviors originate from the interaction between the narrow density of states of the doped leads and the discrete states in the scattering region.
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