4.6 Article

Electronic transport properties in doped C60 molecular devices

Journal

APPLIED PHYSICS LETTERS
Volume 94, Issue 7, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3082085

Keywords

density functional theory; doping profiles; fullerene compounds; fullerene devices; Green's function methods; negative resistance

Funding

  1. National Natural Science Foundation of China [60871065, 10674044, 90403026]
  2. Ministry of Science and Technology of China [2006CB605105, 2006CB302901, 2007CB310500]
  3. Hunan Provincial Natural Science Foundation of China [06JJ20004]

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By applying nonequilibrium Green's functions in combination with the density-functional theory, we investigate the electronic transport properties of molecular junctions constructed by C-60, C59N, and C59B. The results show that the electronic transport properties of molecular junctions can be modulated by doped atoms. Negative differential resistance behavior can be observed in a certain bias range for C-60 molecular junction but cannot be observed in C59N and C59B molecular junctions. A mechanism is proposed for the doping effect and negative differential resistance behavior.

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