Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 21, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3267103
Keywords
carrier density; carrier lifetime; excited states; gallium compounds; III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor superlattices
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Funding
- NVESD
- NSF [DMR071054]
- RFBR
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Minority carrier lifetime and interband absorption in midinfrared range of spectra were measured in InAs/GaSb strained-layer superlattices (SLSs) grown by molecular beam epitaxy on GaSb substrates. The carrier lifetime in 200-period undoped 7 ML InAs/8 ML GaSb SLS with AlSb carrier confinement layers was determined by time-resolved photoluminescence (PL) and from analysis of PL response to sinwave-modulated excitation. Study of PL kinetics in frequency domain allowed for direct lifetime measurements with the excess carrier concentration level of 3.5x10(15) cm(-3). The minority carrier lifetime of 80 ns at T=77 K was obtained from dependence of the carrier lifetime on excitation power.
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