Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3085957
Keywords
carbon; cryogenics; desorption; fluorine; oxygen; passivation; plasma materials processing; silicon compounds; sputter etching; X-ray photoelectron spectra
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The oxyfluorinated silicon passivation layer created during various cryoetching processes is of interest in order to improve high aspect ratio profiles. In this work, the desorption of a SiOxFy layer obtained in an overpassivating SF6/O-2 regime was investigated during the wafer warm-up from the cryogenic temperature to room temperature. An in situ x-ray photoelectron spectroscopy (XPS) device is used in order to probe the top-surface layer and understand the desorption mechanism. A new mechanism can be proposed using the evolution of fluorine, oxygen, silicon, and carbon contributions evidenced by XPS.
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