Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3086896
Keywords
adsorption; annealing; charge exchange; electric sensing devices; gas sensors; graphene; hole density; nitrogen compounds; semiconductor materials
Categories
Funding
- NSF [CMMI-0609059, CBET-0803142]
- U.S. Department of Energy
- Office of Science
- Office of Basic Energy Sciences [DE-AC02-06CH11357]
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [0803142] Funding Source: National Science Foundation
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We demonstrate a high-performance gas sensor using partially reduced graphene oxide (GO) sheets obtained through low-temperature step annealing (300 degrees C at maximum) in argon flow at atmospheric pressure. The electrical conductance of GO was measured after each heating cycle to interpret the level of reduction. The thermally reduced GO showed p-type semiconducting behavior in ambient conditions and were responsive to low-concentration NO2 diluted in air at room temperature. The sensitivity is attributed to the electron transfer from the reduced GO to adsorbed NO2, which leads to enriched hole concentration and enhanced electrical conduction in the reduced GO sheet.
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