Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3077606
Keywords
charge injection; electrodes; gallium compounds; III-V semiconductors; II-VI semiconductors; indium compounds; light emitting diodes; nanofabrication; nanostructured materials; rough surfaces; semiconductor growth; wide band gap semiconductors; zinc compounds
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Funding
- Korean Government [KRF-2007313-D00475]
- Samsung Advanced Institute of Technology
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We report a dramatic increase in the light extraction efficiency of GaN-based blue light-emitting diodes (LEDs) by ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode. ZnO nanorods were grown into aqueous solution at the low temperature of 90 degrees C. With 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was increased by about 57% with no increase in a forward voltage over the conventional LEDs with planar ITO. The increased light extraction by the ZnO nanorod arrays is due to the formation of sidewalls and a rough surface, resulting in a multiple photon scattering at the LED surface.
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