Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3126057
Keywords
calcium compounds; capacitors; lanthanum compounds; praseodymium compounds; random-access storage; space-charge-limited conduction; texture; thin films
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Funding
- National Tsing-Hua University
- Taiwan Semiconductor Manufacturing Co. Limited, Republic of China
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The resistive switching characteristics of Pr0.7Ca0.3MnO3 (PCMO) thin films deposited on LaNiO3 (LNO)-electrodized Si substrate were investigated. Highly (100)-textured PCMO films were grown on the (100)-oriented LNO electrode. They exhibited reversible and steady bistable resistance switching behavior. The resistive switching behavior of PCMO capacitors on LNO is related to the trap-controlled space charge limited current mechanism and LNO/PCMO/LNO capacitor exhibits the strongest resistive switching effect with a resistance ratio for about two orders of magnitude.
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